NoMIS demos 6.5kV large-die SiC MOSFET
- Source
- Semiconductor Today
- Source link
- https://semiconductor-today.com/news_items/2026/aug/nomis-170826.shtml
- Published
- 2026-08-17 15:25:06
- Discovered by ProcIntel
- 2026-08-17 16:42:11
- Category
- Procurement Technology & AI
- Geography
- Global
- Organisations
- —
- Review status
- Pending
- Record type
- REAL
Summary
NoMIS Power Corp of Albany, NY, USA — which was spun off from State University of New York Polytechnic Institute (SUNY Poly) in 2020, and develops silicon carbide (SiC) technologies for medium- and high-voltage power conversion — has demonstrated its first 6.5kV large-die SiC MOSFET. The device was measured at over 8kV blocking, 90mΩ on-resistance, and 55A drain current. The result extends NoMIS Power’s proven planar SiC device technology from its established 3.3kV devices into the high-voltage class, and establishes a clear, demonstrated path toward the company’s forthcoming 10kV MOSFETs and 20kV SiC IGBTs...
Procurement Relevance Gate
- geographic_exposure (weight 8) — matched on "1 linked geography"
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