EPC announces mass production of EPC2370 18V GaN FET for next-gen AI power architectures
- Source
- Semiconductor Today
- Source link
- https://semiconductor-today.com/news_items/2026/aug/epc-200826.shtml
- Published
- 2026-08-20 16:51:06
- Discovered by ProcIntel
- 2026-08-20 18:46:45
- Category
- Procurement Technology & AI
- Geography
- Global
- Organisations
- —
- Review status
- Pending
- Record type
- REAL
Summary
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has announced mass production of the EPC2370, an ultra-low on-resistance 18V eGaN FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22V transient voltage rating that allows it to replace MOSFETs with ratings as high as 25V...
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